Перегляд за автором "Gumenjuk-Sichevska, J.V."

Сортувати за: Порядок: Результатів:

  • Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe 
    Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, ...
  • Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition 
    Melezhik, E.O.; Gumenjuk-Sichevska, J.V.; Dvoretskii, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The band structure and dependences of the intrinsic concentration in the mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum wells in the framework of the 8x8 k.p envelope function method on ...
  • Properties of CdTe thin films prepared by hot wall epitaxy 
    Bilevych, Ye.O.; Boka, A.I.; Darchuk, L.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F.; Boelling, O.; Sulkio-Cleff, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin ...
  • Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays 
    Sakhno, M.V.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It ...
  • Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs 
    Golenkov, A.G.; Zhuravlev, K.S.; Gumenjuk-Sichevska, J.V.; Lysiuk, I.O.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise ...